发明名称 |
Double and triple gate MOSFET devices and methods for making same |
摘要 |
A double gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin, a first gate and a second gate. The first gate is formed on top of the fin. The second gate surrounds the fin and the first gate. In another implementation, a triple gate MOSFET includes a fin, a first gate, a second gate, and a third gate. The first gate is formed on top of the fin. The second gate is formed adjacent the fin. The third gate is formed adjacent the fin and opposite the second gate.
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申请公布号 |
US2004075122(A1) |
申请公布日期 |
2004.04.22 |
申请号 |
US20020274961 |
申请日期 |
2002.10.22 |
申请人 |
LIN MING-REN;AN JUDY XILIN;KRIVOKAPIC ZORAN;TABERY CYRUS E.;WANG HAIHONG;YU BIN |
发明人 |
LIN MING-REN;AN JUDY XILIN;KRIVOKAPIC ZORAN;TABERY CYRUS E.;WANG HAIHONG;YU BIN |
分类号 |
H01L21/336;H01L29/423;H01L29/786;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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地址 |
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