发明名称 SUBSTRATE TREATING APPRATUS
摘要 <p>A substrate treating apparatus, comprising a reaction chamber (6) forming a space for treating a substrate (7), and a gas reserving part (10) connected to the reaction chamber (6), having a gas supply pipe for supplying gas for treating the substrate (7) and a gas exhaust pipe for exhausting the gas inside the reaction chamber (6) and reserving gas supplied to the reaction chamber (6), and reserving the gas to be supplied to the reaction chamber (6) midway in the gas supply pipe, and a bypass line (11) bypassing the gas reserving part (10), the gas receiving part (10) being arranged parallel with the bypass line, and a control part (60) supplying the treating gas to the reaction chamber (6) by using either of the gas reserving part (10) and the bypass line (11) when the substrate (7) is treated.</p>
申请公布号 WO2004034454(A1) 申请公布日期 2004.04.22
申请号 WO2003JP12786 申请日期 2003.10.06
申请人 HITACHI KOKUSAI ELECTRIC INC.;SAKAI, MASANORI;KAGAYA, TORU;SHIMA, NOBUHITO 发明人 SAKAI, MASANORI;KAGAYA, TORU;SHIMA, NOBUHITO
分类号 C23C16/455;H01L21/31;(IPC1-7):H01L21/31 主分类号 C23C16/455
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