| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the size of cells and increasing the capacity of capacitors. <P>SOLUTION: Each cell of a plurality of cells includes a cell transistor (Tr), a 1st search Tr, a 2nd search Tr, and a capacitor. The 1st search Tr and the 2nd search Tr are mutually connected in series to constitute a search circuit. A 2nd impurity diffusion area of the cell Tr is connected to an accumulation electrode of the capacitor and a gate electrode of the 1st search Tr. A word line is connected to the gate electrode of the cell Tr of the corresponding cell, and a bit line is connected to the 1st impurity diffusion area of the corresponding cell Tr. A data bus line is connected to the gate electrode of the corresponding 2nd search Tr, and a match line is connected to one terminal of the corresponding search circuit. A ground line impresses ground voltage to the other terminal of the search circuit. These bit line, data bus line, match line and the ground line are arranged on a wiring layer which is above a capacitor arrangement layer. <P>COPYRIGHT: (C)2004,JPO |
