发明名称 |
PLASMA PROCESSING APPARATUS AND METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and method in which double erosion is formed and non-erosion regions is hardly produced. SOLUTION: The plasma processing apparatus is provided with a vacuum vessel which can maintain a vacuum, a gas supply and exhaust device which exhausts gas while supplying the gas into the vacuum vessel, a cathode electrode which exists in the vacuum vessel and is provided with a target, a substrate electrode which is disposed opposite to the target and can be placed with the substrate, and a power supply device which applies high-frequency electric power to the cathode electrode. The apparatus is provided with a plurality of annular magnets on the periphery of the substrate electrode and is provided with a cathode magnet of an annular or cylindrical shape in the position facing the cathode electrode across the target. Thereby double erosion is formed and the non-erosion regions is hardly produced on the target. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2004124171(A) |
申请公布日期 |
2004.04.22 |
申请号 |
JP20020290081 |
申请日期 |
2002.10.02 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
SAITO MITSUHISA;AOKURA ISAMU;YAMANISHI HITOSHI;SUEMITSU TOSHIYUKI;KIMURA TADASHI;OKUMURA TOMOHIRO;HAYATA HIROSHI;YASHIRO YOICHIRO |
分类号 |
B01J3/00;B01J19/08;C23C14/35;(IPC1-7):C23C14/35 |
主分类号 |
B01J3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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