| 发明名称 |
Method of fabricating a narrow polysilicon line |
| 摘要 |
Disclosed is a method of fabricating a polysilicon line, comprising: forming a patterned hard mask layer over a polysilicon layer; patterning the polysilicon layer to provide a hard mask-capped polysilicon line having a first width; and isotropically removing portions of the polysilicon line to a second width.
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| 申请公布号 |
US2004077169(A1) |
申请公布日期 |
2004.04.22 |
| 申请号 |
US20010964918 |
申请日期 |
2001.09.27 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GRANT CASEY J.;LEIDY ROBERT K.;SHARROW JOEL M. |
| 分类号 |
H01L21/28;H01L21/3213;H01L21/336;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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