ANNEALED WAFER AND ANNEALED WAFER MANUFACTURING METHOD

摘要

An annealed wafer having an excellent oxide film dielectric strength characteristic of the wafer surface to serve as a device fabricating region, having a high density of oxygen precipitate in the bulk layer before the wafer is put into the device process, and having an excellent IG capability, and an annealed wafer manufacturing method are disclosed. The annealed wafer is manufactured by heat-treating a silicon wafer formed of a single crystal grown by the Czochralski method. The percentage defective of the oxide film dielectric strength in the region extending from the surface of the wafer to a depth of 5 mum is 95% or more. The density of oxygen precipitate of size having a gettering capability measured in the wafer is 1x10<9>/cm<3> or more at the stage before the wafer is put into the device process.