OXIDE SINTERED COMPACT AND SPUTTERING TARGET

摘要

PROBLEM TO BE SOLVED: To provide an oxide sintered compact for a sputtering target and an ion plating tablet used in the stable manufacture of a low resistance transparent conductive film at a high film forming speed by the sputtering method or the ion plating method.

SOLUTION: The oxide sintered compact consists essentially of a phase in which silicon is substituted for the indium site of a bixbyite-type indium oxide phase and forms a solid solution. The oxide sintered compact further contains a thortveitite-type structured indium silicate compound phase.

COPYRIGHT: (C)2004,JPO