| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a COF semiconductor device and its manufacturing method, where a junction between a semiconductor element and a wiring pattern provided on a thin film insulating tape is improved in reliability, and air bubbles and voids occurring in an insulating resin in a sealing process are reduced to make the COF semiconductor device more reliable. <P>SOLUTION: The COF semiconductor device is equipped with a thin film insulating tape 1 where wiring patterns 2 are arranged, the semiconductor element 3, and an insulating resin 7 which fixes the semiconductor element 3 on the wiring patterns 2 as the semiconductor element 3 is electrically connected to the wiring patterns 2. The method of manufacturing the COF semiconductor device comprises a resin applying process of applying the insulating resin 7 on the insulating tape 1, a semiconductor element cold-welding process of cold-welding the semiconductor element 3 on the wiring patterns 2 by applying a pressure from above the insulating resin 7, and a resin curing process of curing the insulating resin 7 to fix the semiconductor element 3 on the wiring patterns 2 as the semiconductor element 3 is electrically connected to the wiring patterns 2 by cold-welding. Moreover, the manufacturing method includes an insulating resin pre-heating process of pre-heating the rear of the insulating tape 1 before the insulating resin 7 is applied. <P>COPYRIGHT: (C)2004,JPO |
