| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is excellent in temperature cycle reliability. SOLUTION: The semiconductor device has an insulating resin layer in contact with a semiconductor element, and its inner stress value (σ) of the insulating resin layer is 40MPa or less. Preferably, in the semiconductor device, the semiconductor element is formed of a semiconductor wafer and an insulating resin layer is formed in only one side of the semiconductor element, and furthermore, the semiconductor device has a rewiring circuit conductively connecting a semiconductor electrode and an external connecting electrode, and an external connecting electrode. COPYRIGHT: (C)2004,JPO |
