| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is improved for reduction in the size of a semiconductor device, and its manufacturing method. SOLUTION: The semiconductor device extends in a semiconductor substrate, an electrode disposed in the major surface of the semiconductor substrate and the central part of the electrode, and also extends in a via hole which is opened from an electrode surface to lower than the surface of the semiconductor substrate, the inside of the via hole and the surface of the electrode. The device has a via hole foundation electrode restraining diffusion from a metallic layer, a via hole electrode formed in the surface of the via hole foundation electrode, a rear via hole formed in the rear in the opposite side of the major surface of the semiconductor substrate and opened from the rear of the semiconductor substrate to the via hole electrode and a rear via hole electrode formed on the rear including the inside of the rear via hole. COPYRIGHT: (C)2004,JPO
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