| 摘要 |
PROBLEM TO BE SOLVED: To individually and arbitrarily set the depth (d) of etching for a semiconductor layer and the length (s) of the eaves of a mask. SOLUTION: When providing a mask 16 on the semiconductor layer and etching the semiconductor layer except the mask, etching is performed in two steps, and the desired depth (d) of etching is a total value of the depth d<SB>1</SB>and d<SB>2</SB>in both steps of etching. Further, the eaves of the mask formed in the first etching is temporarily removed, and the desired length (s) of the eaves 17 is obtained only in the second etching. COPYRIGHT: (C)2004,JPO
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