发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device which reduces the variety of a removing amount in removing process such as dry etching process or the like, and to provide a semiconductor manufacturing system for realizing the method. SOLUTION: In the manufacturing method of the semiconductor device 1, a first removing process is started in a gate electrode layer 4A on a semiconductor substrate 2, then, the terminal of the first removing process is detected, and the time of a second removing process of a next stage different in a processing condition from the first removing process is determined based on the terminal time. In this case, the semiconductor manufacturing system is provided at least with a processing chamber, a film thickness measuring unit, a terminal detecting unit, a data base, and a central operation processing unit. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004128094(A) 申请公布日期 2004.04.22
申请号 JP20020288102 申请日期 2002.09.30
申请人 TOSHIBA CORP 发明人 SASAKI TOSHIYUKI;NARITA MASAKI
分类号 H01L21/3065;H01L29/78;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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