发明名称 DEPOSITION FILM FORMING METHOD AND DEPOSITED FILM FORMING SYSTEM
摘要 PROBLEM TO BE SOLVED: To improve the ionization rate of raw material atoms (molecules) and the uniformity of the ion density distribution in the sectional direction of the raw material atoms (molecules) ion beams in ionization deposition. SOLUTION: Deposited films are formed by making rare gas to a meta-stable excited state and acting the gas on the raw material particles, and by bringing the gas in proximity to a supply point (a supply port) of process gas in the flying space of the raw material particles, or while controlling members (electrodes, deposition preventing plates, etc.) arranged on a substrate side to the surface potential 0≥Vp-V. Vp denotes the maximum plasma potential in the flying space of the raw material atoms (molecules) and V denotes the surface potential of the members. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004124206(A) 申请公布日期 2004.04.22
申请号 JP20020292292 申请日期 2002.10.04
申请人 CANON INC 发明人 KOIKE ATSUSHI;YAMAGUCHI HIROTO;KANAI MASAHIRO
分类号 C23C14/54;C23C14/24;H01L21/285;(IPC1-7):C23C14/54 主分类号 C23C14/54
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