发明名称 GRINDING COMPOSITION AND SILICON WAFER GRINDING METHOD EMPLOYING THE SAME, AS WELL AS RINSING COMPOSITION AND SILICON WAFER RINSING METHOD EMPLOYING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a grinding composition and a silicon wafer grinding method employing the same which improves a haze level much more, as well as a rinsing composition and a silicon wafer rinsing method employing the same. <P>SOLUTION: The grinding compound contains (a) hydroxyethyl cellulose, (b) 0.005-0.5 wt% of polyethylene oxide, (c) alkaline compound, (d) water and (e) silicon dioxide. In this case, the grinding composition is constituted so as to be used in a grinding process for the purpose of improving the haze level of surface of the silicon wafer when the grinding is applied on the surface of the silicon wafer by dividing it into a plurality of stages. The rinsing composition contains respective constituents of (a), (b), (c) and (d), and is constituted so as to be used for rinse applied on the surface of the silicon wafer after the grinding process. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004128089(A) 申请公布日期 2004.04.22
申请号 JP20020287979 申请日期 2002.09.30
申请人 FUJIMI INC 发明人 IWASA SHOJI
分类号 B24B37/00;C09G1/02;C09K3/14;C11D3/22;C11D3/37;C11D7/20;C11D11/00;H01L21/304;H01L21/306;(IPC1-7):H01L21/304 主分类号 B24B37/00
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