| 摘要 |
PROBLEM TO BE SOLVED: To avoid the effect of dispersion in the sensitivity of slave photosensitive sections of photosensitive elements configuring a solid-state imaging element. SOLUTION: Opening a transfer gate 40 provided between the sub-photosensitive sections 16 and a vertical transfer path (VCCD) 42 during exposure of photo diodes 12 transfers electric charges from the sub-photosensitive sections 16 to the vertical transfer path 42. Thus, the electric charges in excess of a saturation amount of the sub-photosensitive sections 16 are stored in the sub-photosensitive sections 16 and the vertical transfer path 42. COPYRIGHT: (C)2004,JPO
|
