| 摘要 |
PROBLEM TO BE SOLVED: To shorten a time required for alignment and transfer easily and accurately a mask pattern to each die of wafers. SOLUTION: The electron beam proximity alignment method includes a step 1 where an alignment information of a die for a specified step is stored, a step 2 where an alignment position of the die to be transferred next is calculated according to the information, a step 3 where the die to be transferred next is positioned according to the calculated result, a step 4 where an alignment mark given to a mask and an alignment mark given to the die are photographed and a positioning result of the die is obtained from the photographed information, a step 5 the alignment position calculated in the step 2 is compared with the positioning result obtained in the step 4, a step 6 where the mask and die are aligned so that the quantity of dislocation between them may be a specified value of less thanβand/or the incident angle of the electron beam is controlled, and a step 7 where a mask pattern is transferred onto a resist layer on a wafer. COPYRIGHT: (C)2004,JPO
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