| 摘要 |
PROBLEM TO BE SOLVED: To promote microfabrication of a semiconductor device in which the potential of a source diffusion layer is made equal with that of a well region (semiconductor wafer). SOLUTION: In a heat treatment when forming a gate electrode 6 in the area between a source region 4 and a drain region 5 and in the area surrounding the source region 4 to form a source silicide layer 7a on a surface of the source region 4 by silicification, the source silicide layer 7a is locally grown downwards by heat radiation from the gate electrode 6 and bonding of the source region 4 and a lower well region 3 is destroyed by a local silicide 7c to conduct the both, such that the potentials of the source region 4 and the well region 3 are made equal. COPYRIGHT: (C)2004,JPO
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