MAGNETIC ELEMENT UTILIZING SPIN TRANSFER AND AN MRAM DEVICE USING THE MAGNETIC ELEMENT

摘要

A method and system for providing a magnetic element (100) capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element (100) are disclosed. The magnetic element (100) includes a first ferromagnetic pinned layer (104), a nonmagnetic spacer layer (106), a ferromagnetic free layer (108), an insulating barrier layer (110) and a second ferromagnetic pinned layer (112). The pinned layer (104) has a magnetization pinned in a first direction. The nonmagnetic spacer layer (106) is conductive and is between the first pinned layer (104) and the free layer (108). The barrier layer (110) resides between the free layer (108) and the second pinned layer (112) and is an insulator having a thickness allowing o electron tunneling through the barrier layer (110). The second pinned laye (112) has a magnetization pinned in a second direction. The magnetic element (100) is configured to allow the magnetization of the free layer (108) to change direction due to spin transfer when a write current is passed through the magnetic element (100).