| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a water borne dispersing element for chemical mechanical polishing that prevents scratches even on an object to be polished having an insulation film of small mechanical strength, can polish with high efficiency both a copper film and a barrier metal film, and can sufficiently flatten an insulation film without excessively polishing the film to provide a highly precise finished surface, and to provide a method of manufacturing a semiconductor device. <P>SOLUTION: In the water borne dispersing element for chemical mechanical polishing containing abrasive grains, the abrasive grains include both of (A) simple grains composed of one kind selected from an inorganic grains and organic grains, and (B) complex grains. Preferably the simple grains (A) comprise inorganic grains and the complex grains (B) comprise a complex of the inorganic and organic grains, in which the organic grains and inorganic grains are integrally coupled. The method of manufacturing a semiconductor device includes a step of polishing the surface to be polished of a semiconductor material using the above water borne dispersing element for polishing. <P>COPYRIGHT: (C)2004,JPO</p> |
