| 摘要 |
The invention concerns a monolithically integrated semiconductor component, having a first charge carrier region (12) of a first charge carrier doping; at least two second charge carrier regions (14) with opposite charge carrier doping, patterned within the first charge carrier region (12) at a spacing from one another; and third charge carrier regions (16), with the first charge carrier doping, patterned within the second charge carrier regions (14), a PN transition (22) being short-circuited between the second charge carrier regions (14) and the third charge carrier regions (16) via a contacting area (20) (source connection), the first charge carrier region (12) being equipped with a contact (18) (drain connection), and the second charge carrier regions (14) being invertable by means of a contacting area (26) in the region between the first charge carrier region (12) and the third charge carrier region (16); and having at least one Schottky diode (30) connected in parallel with the charge carrier region (12) and the charge carrier region (16), Provision is made for the first charge carrier region (12) to have a further contacting area (28), this contacting area being additionally doped near the surface, depending on the doping concentration of the first region (12), with a further near-surface charge carrier region (32) of higher concentration, so that an ohmic contact is created and is connected to the anode connection of the at least one Schottky diode (30).
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