| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device which is excellent in light emission efficiency and easily provides a high optical output at a low cost. <P>SOLUTION: An Si substrate 1 whose crystal face orientation is (100) plane is etched to expose (111) plane on a surface for forming a recess 1a on which a group III nitride semiconductor is laminated. In short, GaN doped with n-type impurity such as Si, and GaN doped with p-type impurity such as InGaN and Mg, are sequentially epitaxial-grown on the recess 1a to form an n-type clad layer 3, an active layer 4, and a p-type clad layer 5 for a high efficient and high output light emission region 2a. <P>COPYRIGHT: (C)2004,JPO |
