| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing composition capable of inhibiting occurrence of erosion. <P>SOLUTION: The polishing composition comprises silicon oxide, a polyoxyethylene alkyl ether sulfate shown by general formula(1):R<SP>1</SP>-O-(C<SB>2</SB>H<SB>4</SB>O)<SB>n</SB>SO<SB>3</SB>-X ( wherein, R<SP>1</SP>is a 3-20C alkyl; n is an integer of 2-30; and X is Na, K, ammonium or triethanolamine ), at least one corrosion inhibitor selected from benzotriazole and a derivative thereof, at least one acid selected from nitric acid, hydrochloric acid, sulfuric acid, lactic acid, acetic acid, oxalic acid, citric acid, malic acid, succinic acid, butyric acid and malonic acid, and water. This polishing composition is to be used on polishing a wiring structure having a barrier film formed on an electrical insulation film with wiring grooves and a conductive film formed on the barrier film, more specifically to be used in the step of polishing the barrier film among the steps of polishing the conductive film and then polishing the barrier film. <P>COPYRIGHT: (C)2004,JPO</p> |
