发明名称 |
Method for cleaning a processing chamber and method for manufacturing a semiconductor device |
摘要 |
A method for cleaning a processing chamber and manufacturing a semiconductor device by removing impurities from a substrate in the processing chamber with a plasma of a first gas including hydrogen gas. After the substrate is removed from the processing chamber, the processing chamber is etched with the plasma of a non-hydrogenous second gas. Thus, the etching selectivity can be improved and the particles are prevented from depositing and/or forming on the substrate.
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申请公布号 |
US2004074515(A1) |
申请公布日期 |
2004.04.22 |
申请号 |
US20030606512 |
申请日期 |
2003.06.26 |
申请人 |
KIM JUNG-WOOK;LEE HYEON-DEOK;HONG JIN-GI;PARK JI-SOON;LEE EUNG-JOON |
发明人 |
KIM JUNG-WOOK;LEE HYEON-DEOK;HONG JIN-GI;PARK JI-SOON;LEE EUNG-JOON |
分类号 |
C23C16/52;C23C16/02;C23C16/44;H01L21/28;H01L21/304;H01L21/311;H01L21/768;(IPC1-7):C25F5/00 |
主分类号 |
C23C16/52 |
代理机构 |
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