发明名称 |
THIN FILM TRANSISTOR SUBSTRATE FOR LIQUID CRYSTAL DISPLAY(LCD) AND METHOD OF MANUFACTURING THE SAME |
摘要 |
Disclosed is a thin film transistor substrate having a capacitor structure capable of securing sufficient storage capacitance according to increase in data potential. The thin film transistor substrate includes a black matrix arranged between adjacent unit pixels on transparent insulating substrate, a first oxide film formed on the black matrix, a heavily doped polysilicon layer pattern formed on the first oxide film. The black matrix, the first oxide and the heavily doped polysilicon layer pattern form a capacitor. An active polysilicon layer pattern is formed on the first and second oxide films. A third oxide film is formed on an exposed surface of the active polysilicon layer pattern. A gate poly pattern is formed on the second oxide film including the first contact hole and on a selected region of the third oxide film, and is electrically connected with the underlying heavily doped polysilicon layer pattern.
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申请公布号 |
WO03060603(A8) |
申请公布日期 |
2004.04.22 |
申请号 |
WO2003KR00093 |
申请日期 |
2003.01.16 |
申请人 |
ILJIN DIAMOND CO., LTD;SUH, HEE-SANG;YOU, YEON-HEOK |
发明人 |
SUH, HEE-SANG;YOU, YEON-HEOK |
分类号 |
G02F1/1362;G02F1/1368;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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