| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a self-scanning light emitting device array chip which can improve the light retrieving efficiency without increasing the chip size. <P>SOLUTION: On an n-type substrate 51, a p-type semiconductor layer 24, an n-type semiconductor layer 23, a p-type semiconductor layer 22, and an n-type semiconductor layer 21 are stacked in this order. A cathode electrode 36 is formed on the n-type semiconductor layer 21, a gate electrode 37 is formed on the p-type semiconductor layer 22 which is partially exposed by etching, a substrate-side common electrode 38 for shorts is formed on the p-type semiconductor layer 24 which is partially exposed by etching, and a substrate surface common electrode 52 for shorts is formed on the n-type semiconductor substrate 51 which is exposed by etching. The electrodes 38 and 52 are connected by a connection line 60. <P>COPYRIGHT: (C)2004,JPO |
