CERIUM OXIDE POLISHING AGENT, SEMICONDUCTOR CHIP AND SEMICONDUCTOR DEVICES, THOSE MANUFACTURING METHODS, AS WELL AS METHOD FOR POLISHING SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To polish an organic SOG(spin-on-glass method) film whose global flattening is possible, and which is successfully buried between fine wiring and has a low dielectric constant, a dielectric film of an organic polymer resin film.

SOLUTION: A polishing agent containing slurry in which the following particle of cerium oxide is dispersed in water, is provided. (1) The particle of cerium oxide produced by adding hydrogen peroxide to cerium-carbonate dispersed aqueous solution. (2) The particle of cerium oxide produced by oxidizing a deposit which is produced by adding ammonium hydrogen-carbonate to cerium-nitrate aqueous solution, with hydrogen peroxide. (3) The particle of cerium oxide produced by neutralizing or alkalizing ammonium nitrate aqueous solution.

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