| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-density cross point resistor memory array which is self-aligned to a bottom electrode and has a separated PCMO cell pillar. <P>SOLUTION: The method of manufacturing the self-aligned cross point memory array comprises a process which forms a deep N+ area, a process which forms a shallow P+ area on the N+ area to form P+/N junction, a process which deposits a barrier metal layer on the P+ area, a process which deposits a bottom electrode layer on the barrier metal layer, a process which deposits a sacrificial layer on the bottom eletrode layer, a process which performs patterning on a structure obtained by the above processes and further performing etching thereon and removes the sacrificial layer, the bottom electrode layer, the barrier metal layer and a part of the P+ area and the N+ area to form a trench, a process which fills the trench by depositing an oxide, a process which performs patterning on the sacrificial layer and further etching thereon, and a process which deposits the remaining section of the bottom electrode layer and the self-aligned PCMO layer. <P>COPYRIGHT: (C)2004,JPO |
