| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for processing substrates wherein a substrate can be heat-treated with efficiency in a short time. SOLUTION: In heat treatment equipment 341 in a low-oxygen cure/cooling station (DCC), a ring shutter 346 is provided with a plurality of vent holes 346a arranged in the direction of the thickness of a wafer W. Thus, heated inert gas is supplied into a heat treatment chamber 341 through the vent holes 346a. Therefore, both sides of a wafer W can be heated while the interior of the heat treatment chamber 341 is replaced with the inert gas. COPYRIGHT: (C)2004,JPO
|
