| 发明名称 |
TRANSISTOR, WAFER, MANUFACTURING METHOD OF TRANSISTOR, MANUFACTURING METHOD OF WAFER, AND FORMING METHOD OF SEMICONDUCTOR LAYER |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor that has a low cost and long element lifetime. SOLUTION: An indium arsenide (InAs)layer is placed on a gallium arsenide (GaAs) substrate, and an semiconductor layer is placed on the indium arsenide layer, which is larger than the gallium arsenide substrate and has a lattice constant smaller than the indium arsenide layer. COPYRIGHT: (C)2004,JPO
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| 申请公布号 |
JP2004128415(A) |
申请公布日期 |
2004.04.22 |
| 申请号 |
JP20020294101 |
申请日期 |
2002.10.07 |
| 申请人 |
TOSHIBA CORP |
发明人 |
FUJIMOTO HIDETOSHI |
| 分类号 |
H01L21/205;H01L21/331;H01L21/335;H01L21/338;H01L29/201;H01L29/205;H01L29/26;H01L29/737;H01L29/778;H01L29/812;(IPC1-7):H01L29/201 |
主分类号 |
H01L21/205 |
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