| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing an electric field intensity in an edge portion of a stripe type cell and of improving an endurance quantity of RBSOA without lowering the other properties. SOLUTION: Two stripe-shaped p<SP>+</SP>well layers 9 are mutually connected by means of a connection p<SP>+</SP>well layer 9a with the same width, the same impurity concentration and the same diffusion depth as those of the p<SP>+</SP>well layer 9, so that the electrical field in the edge portion 19 of an IGBT cell is reduced to enable an improvement in the endurance quantity of the RBSOA. COPYRIGHT: (C)2004,JPO
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