| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the delay of voltage change is generated due to the PN junction between the two kinds of gate electrodes of a double gate structure, and that a high speed operation is interrupted. SOLUTION: This insulated gate field-effect transistor is provided with a semiconductor layer 4, a gate insulated film 6 formed on the two side faces in the widthwise direction of the semiconductor layer, and a gate electrode 7 crossing the semiconductor layer with an insulating film 5 interposed. The gate electrode 7 is provided with a first gate electrode 8p constituted of a first conductive semiconductor made adjacent to one side face of the semiconductor layer 4 with the gate insulated film 6 interposed, a second gate electrode 8n constituted of a second conductive semiconductor made adjacent to the side face with the gate insulated film 6 interposed and an ohmic connection layer 9 ohmic-connected to the first gate electrode 8p and the second gate electrode 8n. COPYRIGHT: (C)2004,JPO
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