| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem of bad adhesiveness between a nickel-silicide film and an insulating layer such as a silicon nitride film formed on the silicide film by preventing formation of a silicon-rich interface film, which is a cause of the problem and apt to be formed at an interface between the two, when the silicide film is used as a component of a semiconductor integrated circuit substrate. SOLUTION: To prevent formation of a silicon-rich layer, a nitride-holding gas material such as ammonia is introduced in a nickel-silicide film formed on a silicon substrate, and activated nitride seed generated by introducing plasma under substantially no presence of silicon is reacted with a surface of the silicide film to form silicon nitride, and the silicide surface is protected and stabilized by the formed silicon nitride. COPYRIGHT: (C)2004,JPO
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