发明名称 |
Method for making an island of material confined between electrodes, and application to transistors |
摘要 |
The invention relates to a method for producing a microstructure comprising an island (30) of material confined between two electrodes (32) forming barriers; the island of material having lateral flanks running parallel and perpendicular to the barriers, characterized in that the lateral flanks of the island are defined by etching of at least one layer (16), called the template layer, and the barriers are formed by damascening. Application to manufacturing of transistors and memories.
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申请公布号 |
US2004075123(A1) |
申请公布日期 |
2004.04.22 |
申请号 |
US20030450966 |
申请日期 |
2003.12.04 |
申请人 |
FRABOULET DAVID;MARIOLLE DENIS;MORAND YVES |
发明人 |
FRABOULET DAVID;MARIOLLE DENIS;MORAND YVES |
分类号 |
H01L21/335;H01L29/76;(IPC1-7):H01L21/336;H01L31/062;H01L21/823 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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