| 发明名称 |
Forming polysilicon structures |
| 摘要 |
A doped polysilicon structure may be formed without the need to etch doped polysilicon. The patterned polysilicon may be covered, an opening may be formed in the polysilicon covering, and then the polysilicon may be doped through the opening. As a result, awkward etching of doped polysilicon may be avoided in some cases.
|
| 申请公布号 |
US2004075119(A1) |
申请公布日期 |
2004.04.22 |
| 申请号 |
US20020266427 |
申请日期 |
2002.10.08 |
| 申请人 |
NATARAJAN SANJAY;BAN IBRAHIM;HEIDRICH KEVIN |
发明人 |
NATARAJAN SANJAY;BAN IBRAHIM;HEIDRICH KEVIN |
| 分类号 |
H01L21/265;H01L21/28;H01L21/8238;(IPC1-7):H01L29/76;H01L29/94 |
主分类号 |
H01L21/265 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
