MAGNETIC STORAGE DEVICE USING FERROMAGNETIC TUNNEL JUNCTION ELEMENT

摘要

There is provided a complementary magnetic storage device capable of accurately writing storage data into a pair of ferromagnetic tunnel junction elements, thereby improving the reliability. In the complementary magnetic storage device, antithetical storage data is stored in a first ferromagnetic tunnel junction element and a second ferromagnetic tunnel junction element. The first ferromagnetic tunnel junction element and the second ferromagnetic tunnel junction element are formed adjacent to each other on a semiconductor substrate. A coil-shaped first write wiring is formed around the first ferromagnetic tunnel junction element and a coil-shaped second write wiring is formed around the second ferromagnetic tunnel junction element in such a manner that the winding direction of the first write wiring is opposite to the winding direction of the second write wiring.