| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an internal matching type transistor in which intermodulation strain characteristics are improved. <P>SOLUTION: The internal matching type transistor 1 having a semiconductor element and an internal matching circuit includes a resonance circuit 4 for short-circuiting a differential frequency of signals of different two frequencies as an internal circuit. Thus, the intermodulation strain characteristics in the transistor 1 can be improved. Accordingly, a complicated work of regulating by connecting the resonance circuit out of a semiconductor device is not required, and hence the transistor 1 in which the intermodulation strain characteristics are improved, can be provided as a single component. <P>COPYRIGHT: (C)2004,JPO |
