| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory of which the manufacturing process and the constitution are simple. <P>SOLUTION: A memory block MB0 of this flash memory comprises 64 x 8 pieces of MONOS-type memory cells MC(0. 0) to MC(63, 7) arranged in 64 rows and 8 columns; 64 word lines WL0 to WL63 arranged corresponding to each of the 64 rows; bit lines BL0 to BL7 arranged corresponding to each of the 8 columns; and a source line SL0 arranged in common to all the memory cells MC(0.0) to MC(63, 7). Therefore, since a MONOS type memory cell is used as a memory cell of 1 bit/cell and the conventional type array constitution is adopted, the manufacturing process and the constitution can be simplified. <P>COPYRIGHT: (C)2004,JPO</p> |
