| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a single-crystal-like silicon film at a low process temperature, high throughput rate, and low cost. <P>SOLUTION: A 1st insulating layer, a light absorbing layer shaped in an island shape, and a 2nd insulating layer are provided on a semiconductor layer. Beams emitted from a plurality of linear lamp light sources having their peak wavelength in the vicinity of 1μm are converged for scanning, thereby growing crystal of a semiconductor. <P>COPYRIGHT: (C)2004,JPO</p> |
