发明名称 |
PLASMA TREATING METHOD AND APPARATUS THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treating method and a plasma treating apparatus that can be continuously used for a long term without deteriorating an insulation property in an electrode for placing a substrate. SOLUTION: In the plasma treating method, gas is supplied into a vacuum container while simultaneously exhausting the inside of the vacuum container, the inside of the vacuum container is controlled to a specific pressure, and high-frequency power is supplied to at least one of a plasma source and an electrode in the vacuum container, thus generating a plasma in the vacuum container and hence treating the substrate placed on the electrode in the vacuum container. The substrate is covered with an inorganic insulating layer and the inorganic insulating layer can be treated while being placed on the electrode covered with an organic insulating layer. COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2004128128(A) |
申请公布日期 |
2004.04.22 |
申请号 |
JP20020288593 |
申请日期 |
2002.10.01 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
TAKAGI KIYOHIKO;MORI SATOSHI;KIMURA TEIICHI;MIHASHI AKIO;YAMAGUCHI NAOSHI |
分类号 |
H01L21/3065;H01L21/68;H01L21/683;(IPC1-7):H01L21/68;H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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