| 发明名称 |
OXIDATION RESISTANT MICROELECTRONIC CAPACITOR STRUCTURE WITH L SHAPED ISOLATION SPACER |
| 摘要 |
A capacitor structure within a microelectronic product employs at least one of: (1) an oxidation barrier layer formed upon a second capacitor plate within the capacitor structure; and (2) a spacer formed adjoining a sidewall of the second capacitor plate, where the spacer is formed with an "L" shape. The foregoing features of the capacitor structure provide a capacitor formed therein with enhanced performance.
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| 申请公布号 |
US2004075129(A1) |
申请公布日期 |
2004.04.22 |
| 申请号 |
US20020272648 |
申请日期 |
2002.10.16 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
TU KUO-CHI;TU YEUR-LUEN;LIN TIEN-LU;CHEN CHUN-YAO |
| 分类号 |
H01L21/02;H01L27/108;H01L29/00;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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