ULTRA-SHORT ULTRAVIOLET OPTICAL SYSTEM-USE REFLECTION MIRROR, ULTRA-SHORT ULTRAVIOLET OPTICAL SYSTEM, APPLICATION METHOD FOR ULTRA-SHORT ULTRAVIOLET OPTICAL SYSTEM, PRODUCTION METHOD FOR ULTRA-SHORT ULTRAVIOLET OPTICAL SYSTEM, ULTRA-SHORT ULTRAVIOLET EXPOSURE SYSTEM, AND APPLICATION METHOD FOR ULTRA-SHORT ULTRAVIOLET EXPOSU

摘要

A thin-film resistor layer (2) consisting of TaN is formed on a low-thermal-expansion glass substrate (1). A 100-nm-thick electrode layer (3) consisting of Al is provided to feed a current to the resistor layer (2) so as to contact the opposite ends thereof. A 300-nm-thick insulation layer (4) consisting of SiO2 is formed on the resistor layer (2). And, an Mo/Si multi-layer optical film (5) having a frequency length of 6.7 nm and 50 layer pairs is formed thereon to serve as a reflector. The multi-layer optical film (5) is electrically insulated from the resistor layer (2) by the insulation layer (4). The resistor layer (2) is provided with a cut (21) about 10 mum wide to provide a desired heating distribution. A properly arranged cut (21) makes it possible to obtain almost the same heating distribution as by heating by light absorption when an EUV light is applied. Accordingly, a ultra-short ultraviolet optical system-use reflection mirror is provided that can give optical characteristics close to those in an actual use even while its optical characteristics are being measured.