发明名称 |
PLASMA OSCILLATION SWITCHING DEVICE |
摘要 |
A plasma oscillation switching device comprises a semiconductor substrate (101), a first barrier layer (103) formed on the substrate and made of a group III-V compound semiconductor, a channel layer (104) formed on the first barrier layer and made of a group III-V compound semiconductor, a second barrier layer (105) formed on the channel layer and made of a group III-V compound semiconductor, a source electrode (107), a gate electrode (109) and a drain electrode (108), these three electrodes being formed on the second barrier layer. The first barrier layer has an n-type diffusion layer (103a) and the second barrier layer has a p-type diffusion layer (105a). The band gap of the cannel layer is smaller than those of the first and second barrier layers. Two-dimensional electron gas (EG) accumulates in a conduction band on the boundary between the first barrier layer and the channel layer, while two-dimensional hole gas (HG) accumulates in a valence band of the boundary between the second barrier layer and the channel layer. The electrodes are formed on the second barrier layer via an insulating layer (106).
|
申请公布号 |
WO2004034475(A1) |
申请公布日期 |
2004.04.22 |
申请号 |
WO2003JP12469 |
申请日期 |
2003.09.30 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;YOSHII, SHIGEO;OTSUKA, NOBUYUKI;MIZUNO, KOICHI;SUZUKI, ASAMIRA;YOKOGAWA, TOSHIYA |
发明人 |
YOSHII, SHIGEO;OTSUKA, NOBUYUKI;MIZUNO, KOICHI;SUZUKI, ASAMIRA;YOKOGAWA, TOSHIYA |
分类号 |
H01L29/812;H01L21/338;H01L29/20;H01L29/778;H01L29/80;(IPC1-7):H01L29/80;H01L29/66;H01L29/78;H01L21/336 |
主分类号 |
H01L29/812 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|