发明名称 |
MEDIUM PURITY METALLURGICAL SILICON AND METHOD FOR PREPARING SAME |
摘要 |
<p>Process for preparing photovoltaic quality silicon comprises: oxygen or chlorine refining giving a product with <= 100 ppm of iron, re-melting in a neutral atmosphere in electrical crucible furnace, transfer of molten silicon to plasma refining in crucible furnace; refining under plasma with a plasmagenic gas; and pouring into ingot-mold under controlled atmosphere by segregated solidification. An Independent claim is also included for the purified silicon obtained.</p> |
申请公布号 |
EP1409406(A1) |
申请公布日期 |
2004.04.21 |
申请号 |
EP20020767591 |
申请日期 |
2002.07.22 |
申请人 |
INVENSIL |
发明人 |
BALUAIS, GERARD;CARATINI, YVES |
分类号 |
C01B33/037;H01L31/18;(IPC1-7):C01B33/037;C01B33/025 |
主分类号 |
C01B33/037 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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