发明名称 MEDIUM PURITY METALLURGICAL SILICON AND METHOD FOR PREPARING SAME
摘要 <p>Process for preparing photovoltaic quality silicon comprises: oxygen or chlorine refining giving a product with <= 100 ppm of iron, re-melting in a neutral atmosphere in electrical crucible furnace, transfer of molten silicon to plasma refining in crucible furnace; refining under plasma with a plasmagenic gas; and pouring into ingot-mold under controlled atmosphere by segregated solidification. An Independent claim is also included for the purified silicon obtained.</p>
申请公布号 EP1409406(A1) 申请公布日期 2004.04.21
申请号 EP20020767591 申请日期 2002.07.22
申请人 INVENSIL 发明人 BALUAIS, GERARD;CARATINI, YVES
分类号 C01B33/037;H01L31/18;(IPC1-7):C01B33/037;C01B33/025 主分类号 C01B33/037
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