发明名称 Semiconductor memory device and testing system and testing method
摘要 The semiconductor memory device includes a reference potential set-up circuit (150) which sets up a predetermined potential assigned from the outside of the device as the potential of a reference signal. A reference signal generator produces the reference signal when an amplifier amplifies a data signal occurring on the bit lines. The amplified data signal is compared with the reference signal. Independent claims are also included for the following: (a) a semiconductor memory device testing system; and (b) a semiconductor memory device testing method.
申请公布号 EP1408514(A3) 申请公布日期 2004.04.21
申请号 EP20030028683 申请日期 2001.04.04
申请人 NEC CORPORATION 发明人 KOIKE, HIROKI
分类号 G01R31/28;G06F12/16;G11C11/22;G11C11/401;G11C11/56;G11C14/00;G11C29/12;G11C29/50 主分类号 G01R31/28
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