发明名称 |
METHOD FOR FORMING ETCH MASK USED IN FABRICATING PLANAR LIGHTWAVE GUIDE, ESPECIALLY PREVENTING THE DAMAGE OF AN EPI LAYER LIKE A MASK PATTERN AND A LIGHTWAVE GUIDE |
摘要 |
PURPOSE: A method for forming an etch mask used in fabricating a planar lightwave guide is provided to prevent the damage of an epi layer like a mask pattern and a lightwave guide, and to form a more accurate mask pattern and to increase etch rate of a mask layer. CONSTITUTION: A lightwave guide is formed on a substrate(100). A mask layer is formed on the lightwave guide. A photoresist pattern revealing the mask layer is formed on the mask layer. And a mask pattern(550) is formed by patterning the revealed mask layer with an etching method using an inductively coupled plasma apparatus including a cathode electrode applied with the first RF power and an inductively coupled plasma coil and a chamber, using the photoresist pattern as a mask.
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申请公布号 |
KR100429849(B1) |
申请公布日期 |
2004.04.21 |
申请号 |
KR19970050362 |
申请日期 |
1997.09.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, DONG SU;SONG, HYEONG SEUNG;JUNG, SEON TAE |
分类号 |
G02B6/136;(IPC1-7):G02B6/136 |
主分类号 |
G02B6/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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