发明名称 METHOD FOR FORMING ETCH MASK USED IN FABRICATING PLANAR LIGHTWAVE GUIDE, ESPECIALLY PREVENTING THE DAMAGE OF AN EPI LAYER LIKE A MASK PATTERN AND A LIGHTWAVE GUIDE
摘要 PURPOSE: A method for forming an etch mask used in fabricating a planar lightwave guide is provided to prevent the damage of an epi layer like a mask pattern and a lightwave guide, and to form a more accurate mask pattern and to increase etch rate of a mask layer. CONSTITUTION: A lightwave guide is formed on a substrate(100). A mask layer is formed on the lightwave guide. A photoresist pattern revealing the mask layer is formed on the mask layer. And a mask pattern(550) is formed by patterning the revealed mask layer with an etching method using an inductively coupled plasma apparatus including a cathode electrode applied with the first RF power and an inductively coupled plasma coil and a chamber, using the photoresist pattern as a mask.
申请公布号 KR100429849(B1) 申请公布日期 2004.04.21
申请号 KR19970050362 申请日期 1997.09.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DONG SU;SONG, HYEONG SEUNG;JUNG, SEON TAE
分类号 G02B6/136;(IPC1-7):G02B6/136 主分类号 G02B6/136
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