APPARATUS WITH IMPROVED MATERIAL GAS SUPPLY MECHANISM FOR FORMING DEPOSITED LAYER

摘要

PURPOSE: An apparatus is provided to form a micro-crystal i type semiconductor layer with good properties and enough thickness between an amorphous i type semiconductor layer and a second conductive semiconductor layer within a short time by using an improved material gas supply mechanism. CONSTITUTION: An apparatus is used for depositing a layer on a substrate with a long length by dissolve material gas using glow-discharge. The apparatus includes a plurality of material gas supply ports(1021) for supplying material gas to the substrate. The intervals of the ports vary to a length direction of the substrate.