发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A method is disclosed for manufacturing a semiconductor device. Initially, a conductive layer is formed over a cell array region, in which high-integrated devices are formed, and over a non-cell region, which functions to assist a proper formation of the cell array region. An etching mask pattern is then formed over the conductive layer to form a conductive pattern over the cell array region and to remove the conductive layer formed on the non-cell region. The conductive pattern is actually formed by etching the conductive layer. An ion-assisted plasma etching is then implemented to form a pattern on the cell array region. This prevents the generation of arcing caused by independent conductive patterns formed on the non-cell region during the ion-assisted plasma etching. |
申请公布号 |
US6723647(B1) |
申请公布日期 |
2004.04.20 |
申请号 |
US20000618097 |
申请日期 |
2000.07.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DONG-YUN;PARK YONG-HYEON |
分类号 |
H01L21/302;H01L21/027;H01L21/3065;H01L21/3213;H01L21/8239;H01L23/544;(IPC1-7):H01L21/302;H01L21/306;H01L21/311 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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