发明名称 |
Semiconductor device and power amplifier using the same |
摘要 |
A semiconductor device comprising a bipolar transistor having an emitter layer consisting of a semiconductor containing indium, and a protective insulating film containing silicon and oxygen which is formed on the surface of the guard ring of the emitter layer, wherein the protective insulating film has a density of oxygen of less than 7x10<22 >cm<-3>. This semiconductor device prevents performance deterioration and ensures high performance in a power amplifier.
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申请公布号 |
US6724020(B2) |
申请公布日期 |
2004.04.20 |
申请号 |
US20030420764 |
申请日期 |
2003.04.23 |
申请人 |
RENESAS TECHNOLOGY CORPORATION |
发明人 |
TAKAZAWA HIROYUKI;OKA TOHRU;OHBU ISAO;IMAMURA YOSHINORI |
分类号 |
H01L29/73;H01L21/316;H01L21/331;H01L29/205;H01L29/737;H03F3/21;H03F3/60;(IPC1-7):H01L31/109 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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