| 摘要 |
The present invention is aimed at decreasing the current required for writing in a magnetic random access memory (MRAM), and power consumption thereof. In a magnetic random access memory of the present invention, information is written in memory elements arranged in a same row or column by performing once each of the first information writing step of applying a first magnetic field to put memory elements in the high-resistance state, and the second information writing step of applying a second magnetic field to the memory elements in which the first information has not been written to write information in all memory elements in the same row under recording of information. Alternatively, a magnetic random access memory includes a plurality of first wirings for applying a magnetic field in the direction of the easy magnetization axis of a magnetic layer, and a plurality of second wirings for applying a magnetic field in a direction inclined from the direction of the easy magnetization axis of the magnetic layer, wherein a current is passed through one of the second wirings to apply a magnetic field to all memory elements arranged in a same row or column of the rows or columns of a plurality of the memory cells arranged in parallel to the second wirings, and currents are passed through the plurality of first wirings in directions according to the information to be recorded in the respective memory elements synchronously with the current pulse passed through the second wiring to apply a magnetic field to each of the magnetoresistive elements, thereby recording information on the plurality of memory elements arranged in the same row or column.
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