| 发明名称 |
Magnetic shielding for MRAM devices |
| 摘要 |
A magnetic random access memory module includes a magnetic memory array. A permeable metal layer extends over a first side of the magnetic memory array. An electrically insulating layer is disposed between the permeable metal layer and the magnetic memory array.
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| 申请公布号 |
US6724027(B2) |
申请公布日期 |
2004.04.20 |
| 申请号 |
US20020125095 |
申请日期 |
2002.04.18 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
BHATTACHARYYA MANOJ K.;BLOOMQUIST DARREL;HOLDEN ANTHONY PETER;BRANDENBERGER SARAH MORRIS |
| 分类号 |
H01L21/00;H01L27/22;H01L29/76;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/00 |
| 代理机构 |
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